DRIE
- Oxford 100 ICP
- Etch Gases: SF6, CF4, O2, Ar, N2, CHF3, C4F8
- 4" Wafer or carrier, 8" wafer with clamp change
Wet Etching
- 5 wet chemical (acids and bases) processing stations with neutralization tank
- KOH etch station with temperature controlled bath
- Etch Chemicals Available: HF, BOE, HCl, Al Etch, Au Etch, Cr Etch, Phosphoric Acid, Nitric Acid, Sulfuric Acid, H2O2, NaOH, KOH
- Etchant Recipes A-Z
- Etch rates for micromachining processing, Part I
- Etch rates for micromachining processing, Part II