S/N: 0498-4669
- Measures the changes in the radius of curvature of a substrate created by deposition of a stressed thin film on its surface
- Measures elastic constant and thermal expansion coefficient of a thin film if the thickness of the film and the substrate are known
- Substrate size: 3 8 round
- Operating Temp: room 500C
- Substrate surface must be able to reflect a laser beam
- 3-d mapping options
- Automated stress calculation
- Laser: 4-mW GaAlAs laser with wavelength 670nm and 4-mW GaAlAs laser with wavelength 780nm
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