Oxford 100 ICP

Status Up

Tool Owner

Please contact Steve Pritchett for more information. (S/N 721002)

Etching

  • Etch Gases: SF6, CF4, O2, Ar, N2, CHF3, C4F8
  • Cryo DRIE up to 5 um/min
  • 4" Wafers, 6" or 8" wafers with clamp change

Images

High Aspect Ratio:

https://www.nanofab.utah.edu/uploads/images/drie_high_aspect_ratio.jpg

Minimal Undercut:

https://www.nanofab.utah.edu/uploads/images/drie_no_undercut.jpg

 

Process Status

Live Screenshot: Click Here

Or live screenshots for other tools: Click Here

Process Information

Oxford 100 DRIE SF6/C4F8 Log Sheet

 Cross Section Pictures of Results:    High Aspect Ratio    No Undercut

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