Lithography

Standard Processes

Shipley 1813 standard process (down to 2 um lines at full height)

1) HMDS Vapor Prime oven: run standard 150 C process 

2) CEE 200 1813 spinner: 2000 rpm, 60 sec 

3) Hot plate bake 110 C 60 sec 

4) Measure Suss aligner lamp intensity at 365 nm using OAI handheld UV intensity meter

5) Suss aligner hard contact mode, exposure time = 30 mW/cm^2/measured lamp intensity 

6) Develop AZ 1:1 developer 30 sec, room temperature 

7) DI rinse 2 min, Spin Rinse Dry 

Shipley 1813 small feature process (down to 1.5 um lines at full height)

1) HMDS Vapor Prime oven: run standard 150 C process 

2) CEE 200 1813 spinner: 2000 rpm, 60 sec 

3) Hot plate bake 110 C 60 sec 

4) Measure Suss aligner lamp intensity at 365 nm using OAI handheld UV intensity meter 

5) Suss aligner hard contact mode, exposure time = 25 mW/cm^2/measured lamp intensity 

6) Develop AZ 1:1 developer 45 sec, room temperature 

7) DI rinse 2 min, Spin Rinse Dry 

AZ 9260 thick resist for DRIE (~10 um thickness)

1) HMDS Vapor Prime oven: run standard 150 C process

2) CEE 200 9260 spinner: 1500 rpm, 60 sec

3) Hot plate bake 110 C 180 sec

4) Measure Suss aligner lamp intensity at 365 nm using OAI handheld UV intensity meter

5) Suss aligner hard contact mode, exposure time = 200 mW/cm^2/measured lamp intensity

6) Develop AZ 400K:H2O 1:3.25 developer 6 min, room temperature

7) DI rinse 2 min, Spin Rinse Dry

Documentation

General Photolithography SOP:

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